Tungsten Silicide

Tungsten silicide WSi2 is used as an electric shock material in microelectronics, shunting on polysilicon wires, anti-oxidation coating and resistance wire coating. Tungsten silicide is used as a contact material in microelectronics, with a resistivity of 60-80μΩcm. It is formed at 1000°C. It is usually used as a shunt for polysilicon lines to increase its conductivity and increase signal speed. The tungsten Silicide layer can be prepared by chemical vapor deposition, such as vapor deposition. Use monosilane or dichlorosilane and tungsten hexafluoride as raw material gas. The deposited film is non-stoichiometric and requires annealing to be transformed into a more conductive stoichiometric form.

Tungsten silicide can replace the earlier tungsten film. Tungsten silicide is also used as a barrier layer between silicon and other metals.

Tungsten silicide is also very valuable in microelectromechanical systems, among which tungsten silicide is mainly used as a thin film for manufacturing microcircuits. For this purpose, the tungsten silicide film can be plasma-etched using, for example, silicide.

Rich Special Materials specializes in the Manufacture of Sputtering Target and could produce Tungsten Silicide Sputtering Materials according to Customers’ specifications. For more information, please contact us.