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Characteristics of ultra high purity aluminum sputtering targets

  In recent years, with the progress of integrated circuit (IC) technology, the related applications of integrated circuits have been rapidly developed. Ultra high purity aluminum alloy sputtering target, as a supporting material in the manufacturing of integrated circuit metal interconnects, has become a hot topic in recent domestic research. the editor of RSM will show us the characteristics of high purity aluminum alloy sputtering target.

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  In order to further improve the sputtering efficiency of magnetron sputtering target and ensure the quality of deposited films, a large number of experiments show that there are certain requirements for the composition, microstructure and grain orientation of ultra-high purity aluminum alloy sputtering target.

  The grain size and grain orientation of the target have great influence on the preparation and properties of IC films. The results show that the deposition rate decreases with the increase of grain size; For the sputtering target with the same composition, the sputtering rate of the target with small grain size is faster than that of the target with large grain size; The more uniform the grain size of the target, the more uniform the thickness distribution of the deposited films.

  Under the same sputtering instrument and process parameters, the sputtering rate of Al Cu alloy target increases with the increase of atomic density, but it is generally stable in a range. The effect of grain size on sputtering rate is due to the change of atomic density with the change of grain size; The deposition rate is mainly affected by the grain orientation of Al Cu alloy target. On the basis of ensuring the proportion of (200) crystal planes, the increase of the proportion of (111), (220) and (311) crystal planes will increase the deposition rate.

  The grain size and grain orientation of ultra-high purity aluminum alloy targets are mainly adjusted and controlled by ingot homogenization, hot working and recrystallization annealing. With the development of wafer size to 20.32cm (8in) and 30.48cm (12in), the target size is also increasing, which puts forward higher requirements for ultra-high purity aluminum alloy sputtering targets. In order to ensure the film quality and yield, the target processing parameters must be strictly controlled to make the target microstructure uniform and the grain orientation must have strong (200) and (220) plane textures.


Post time: Jun-30-2022